Can B-Site Doping or Alloying Improve Thermal- and Phase-Stability of All-Inorganic CsPbX3 (X = Cl, Br, I) Perovskites?

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dc.contributor.authorSWARNKAR, ABHISHEKen_US
dc.contributor.authorMIR, WASIM J.en_US
dc.contributor.authorNAG, ANGSHUMANen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.contributor.departmentDept. of Physicsen_US
dc.date.accessioned2019-09-09T11:37:15Z
dc.date.available2019-09-09T11:37:15Z
dc.date.issued2018-01en_US
dc.description.abstractIntentional incorporation of impurity ions into the crystal lattice is termed doping and has been used as an important strategy to tailor electronic, optical, and magnetic properties of a material.(1) Therefore, the major aim of doping (or even alloying) is to impart new functionalities into the host material. In contrast, the present discussion is on whether the doping can increase the stability of the host without altering its optoelectronic properties. The specific question is, can partial substitution of Pb2+ with other metal ions (from an extent of doping to alloying) stabilize the desired phase of CsPbX3 (X = Cl, Br, I) perovskites for commercially viable optoelectronic applications?en_US
dc.identifier.citationACS Energy Letters, 3(2), 286-289.en_US
dc.identifier.issn2380-8195en_US
dc.identifier.sourcetitleACS Energy Lettersen_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4017
dc.identifier.urihttps://doi.org/10.1021/acsenergylett.7b01197
dc.language.isoenen_US
dc.publication.originofpublisherForeignen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectIntentional incorporationen_US
dc.subjectImpurityen_US
dc.subjectMetal halide perovskitesen_US
dc.subjectOptimizationen_US
dc.subjectFilm depositionen_US
dc.subject2018en_US
dc.titleCan B-Site Doping or Alloying Improve Thermal- and Phase-Stability of All-Inorganic CsPbX3 (X = Cl, Br, I) Perovskites?en_US
dc.typeArticleen_US

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