Can B-Site Doping or Alloying Improve Thermal- and Phase-Stability of All-Inorganic CsPbX3 (X = Cl, Br, I) Perovskites?

Abstract

Intentional incorporation of impurity ions into the crystal lattice is termed doping and has been used as an important strategy to tailor electronic, optical, and magnetic properties of a material.(1) Therefore, the major aim of doping (or even alloying) is to impart new functionalities into the host material. In contrast, the present discussion is on whether the doping can increase the stability of the host without altering its optoelectronic properties. The specific question is, can partial substitution of Pb2+ with other metal ions (from an extent of doping to alloying) stabilize the desired phase of CsPbX3 (X = Cl, Br, I) perovskites for commercially viable optoelectronic applications?