Transition Metal-Assisted Growth of Graphene and Thin-Layer Graphite (Few-layer Graphene) FilMS and their Characterisation

Abstract

Graphene and few layer graphene (thin-layer graphite) are important materials for a variety of potential applications. Large-scale growth of these materials is an area of growing interest and is proven to be challenging. Transition metal-assisted growth of graphene and thin-layer graphite by CVD (chemical vapor deposition) is one of the promising approaches presently available for a large scale growth. This project aimed at growing monolayer and bilayer graphene (particularly in their AB-stacked form) on commercially available transition metal and alloy catalysts (Cu and CuNi) by CVD and their transfer on a dielectric substrate using various transfer methods (such as polymer-assisted wet transfer or electrochemical ‘bubbling’ transfer). Transferred films were analysed by methods including optical microscopy, Raman spectroscopy, SEM, AFM, and XPS. We explored growing thin-layer graphite (what might be also called few layer graphene, particularly when in the AB-stacked configuration) on homemade mono crystalline Ni (111) foil using graphitizable precursors. Phenolic resin showed promising results. Thermogravimetric analysis (TGA) was used to study the degradation of phenolic resin along with Raman, SEM, AFM and XPS measurements. We also aimed to grow large area graphene/thin-layer graphite on various substrates using mechanically exfoliated graphite as a seed. As-grown films were characterised by optical images, Raman spectroscopy, and SEM.