Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition

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dc.contributor.authorMANDAL, PANKAJen_US
dc.contributor.authorSpeck, Andrewen_US
dc.contributor.authorKo, Changhyunen_US
dc.contributor.authorRamanathan, Shriramen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.date.accessioned2019-02-14T05:51:30Z
dc.date.available2019-02-14T05:51:30Z
dc.date.issued2011-01en_US
dc.description.abstractWe present results on terahertz (THz) spectroscopy on epitaxial vanadium dioxide (VO2) films grown on sapphire across the metal-insulator transition. X-ray diffraction indicates the VO2 film is highly oriented with the crystallographic relationship: (002)film//(0006)sub and [010]film//[21¯1¯0]sub. THz studies measuring the change in transmission as a function of temperature demonstrate an 85% reduction in transmission as the thin film completes its phase transition to the conducting phase, which is much greater than the previous observation on polycrystalline films. This indicates the crucial role of microstructure and phase homogeneity in influencing THz properties.en_US
dc.identifier.citationOptics Letters, 36(10), 1927-1929en_US
dc.identifier.issn0146-9592en_US
dc.identifier.issn1539-4794en_US
dc.identifier.sourcetitleOptics Lettersen_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/1820
dc.identifier.urihttps://doi.org/10.1364/OL.36.001927
dc.language.isoenen_US
dc.publication.originofpublisherForeignen_US
dc.publisherOptical Society of Americaen_US
dc.subjectTerahertz spectroscopyen_US
dc.subjectvanadium dioxide|thin filmsen_US
dc.subjectmetal-insulator transitionen_US
dc.subjectterahertz (THz) spectroscopyen_US
dc.subjectInfluencing THz propertiesen_US
dc.subject2011en_US
dc.titleTerahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transitionen_US
dc.typeArticleen_US

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