Magnetic Transport Studies on 2-D Ferromagnet Fe5GeTe2 and Thickness-dependent Topological Charge Simulations in van der Waals Heterostructures

Abstract

In the last decade, two-dimensional van der Waals(VdW) materials have emerged as a key platform for exploring long-range ferromagnetic order in atomically thin layers. The recent discovery of near-room-temperature ferromagnetism in metallic Fe5−δGeTe2, which can be further fine-tuned by Fe doping, has expanded the potential of VdW ferromagnets for room temperature spintronic applications. Being the latest member of the FGT family, many of its properties have yet to be explored compared to those of its sister compounds. In this work, we have successfully grown and characterized single-crystal Fe4.86GeTe2.12 using the Chemical Vapor Transport (CVT) method, with a Curie temperature (TC) of 280 K. We are further planning to explore its fundamental properties and potential applications through the induced proximity effects by making heterostructures with other van der Waals materials. Addition ally, we have performed micromagnetic simulations to support and theoretically investigate the topological Hall effect (THE) induced at the interface of Fe3GeTe2 heterostructures with a topological insulator.