Enhanced dielectric permittivity and photoluminescence in Cr doped ZnS nanoparticles

dc.contributor.authorVirpalen_US
dc.contributor.authorKUMAR, JITENDRAen_US
dc.contributor.authorThangraj, R.en_US
dc.contributor.authorSingh, M.en_US
dc.contributor.authorSharma, Sandeepen_US
dc.contributor.authorSingh, Ravi Chanden_US
dc.contributor.departmentDept. of Physicsen_US
dc.date.accessioned2019-07-01T05:54:53Z
dc.date.available2019-07-01T05:54:53Z
dc.date.issued2017-09en_US
dc.description.abstractThe effect of Cr doping on dielectric and optical properties of ZnS nanoparticles was systematically investigated at room temperature. Structural analysis confirmed that dopant occupy the regular lattice and interstitial sites in host lattice. Experimental data revealed exceptionally large, low frequency dielectric constant (ϵ′ ≈ 106) and enhanced photoluminescence emission in Cr doped ZnS nanoparticles. It is argued that larger value of the dielectric constant in doped nanoparticles originate due to combined effect of Maxwell–Wagner phenomenon and microscopic spontaneous polarization, when larger ionic radius Zn2+ (0.74 Å) ions are replaced by smaller ionic radius Cr3+(0.63 Å) ions. The huge enhancement in the value of dielectric constant and emission intensity justify the use of doped ZnS nanostructures for various technological applications.en_US
dc.identifier.citationApplied Surface Science, 416, 296-301.en_US
dc.identifier.issn0169-4332en_US
dc.identifier.sourcetitleApplied Surface Scienceen_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3505
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2017.04.180
dc.language.isoenen_US
dc.publication.originofpublisherForeignen_US
dc.publisherElsevier B.V.en_US
dc.subjectEnhanced dielectric permittivityen_US
dc.subjectPhotoluminescenceen_US
dc.subjectCr doped ZnSen_US
dc.subjectNanoparticlesen_US
dc.subject2017en_US
dc.titleEnhanced dielectric permittivity and photoluminescence in Cr doped ZnS nanoparticlesen_US
dc.typeArticleen_US

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