Thin Films of MOF-on-Guest@MOF: A Simple Strategy of Designing Electronic Heterostructures

Abstract

Depositing thin films of pristine metal–organic framework (MOF) on top of a lattice-matched and molecularly doped MOF could provide a new path for generating electronic heterostructures of MOFs with well-defined interfaces. Herein, the Cu3BTC2 (top-layer)/TCNQ@Cu3BTC2 (bottom-layer) system is fabricated by sequential deposition on a functionalized Au substrate, and clear-cut rectification of electrical current across the thin film was observed at room-temperature. Interestingly, the electrical current rectification ratio (RR) was found to be significantly influenced by the effect of temperature (400 K), resulting in a remarkable figure in the domain of MOFs.